Title :
Assumptions and trade-offs in device simulation programs
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
The author examines the physical assumptions which underlie device simulation programs and considers their implications for advanced bipolar transistors. The limits of drift-diffusion equations are discussed, and advanced techniques such as hydrodynamic and Monte Carlo approaches are described. Some thoughts on the device simulation requirements for future generation bipolar transistors are also presented
Keywords :
Monte Carlo methods; bipolar transistors; digital simulation; electronic engineering computing; semiconductor device models; Boltzmann transport equation; advanced bipolar transistors; device simulation programs; drift-diffusion equations; hydrodynamic transport equations; Bipolar transistors; Charge carrier processes; Circuit simulation; Equations; Hydrodynamics; Ice; Kinetic energy; Microscopy; Monte Carlo methods; Semiconductor device modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274087
