Title :
MOSFETs with 9 to 13 A thick gate oxides
Author :
Krishnan, M.S. ; Cheng, Lin ; Tsu-Jae King ; Bokor, J. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
In this work, NMOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for a mobility reduction mechanism, namely Remote Charge Scattering, has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.
Keywords :
MOSFET; carrier mobility; dielectric thin films; leakage currents; tunnelling; 9 to 13 A; MOSFET gate currents; NMOSFET; accumulation regime; gate oxides; ionized impurities; mobility reduction mechanism; n-MOSFET; n-channel MOSFETs; oxide thickness extraction; poly-gate; remote charge scattering; Degradation; Electrons; Etching; Impurities; Leakage current; MOSFETs; Plasma chemistry; Scattering; Substrates; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823888
