Title :
SHBT-a Schottky heterojunction bipolar transistor
Author :
Li, Ping ; Li, Yong Q. ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
A Schottky heterojunction bipolar transistor (SHBT) is produced and demonstrated. The structure uses a very thin amorphous silicon emitter to reduce the emitter resistance, enhance the current gain, and improve the frequency response. In a comparison between the SHBT and the conventional heterojunction bipolar transistor, the SHBT exhibited improved current gain and current handling capability as well as higher frequency performance. These improvements were associated with the use of the thin emitter
Keywords :
Schottky effect; amorphous semiconductors; elemental semiconductors; heterojunction bipolar transistors; silicon; SHBT; Schottky HBT; Schottky heterojunction bipolar transistor; Si-Si:H; current gain; current handling capability; emitter resistance; frequency response; thin amorphous Si emitter; Amorphous silicon; Bipolar transistors; Current density; Electric resistance; Electron emission; Equations; Frequency response; Heterojunction bipolar transistors; Photonic band gap; Schottky barriers;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274088
