Temperature and concentration dependence of drift mobility of majority carriers in the ultra heavily doped n-Si in the presence of defects and dislocations

Using a self-consistent method, a numerical analysis was made of the drift mobility of majority carriers dependent on impurity concentrations (N_D=10²⁰ to 6×10²¹ cm^-3) in the presence of defects (N_def=5×10¹⁵ to 5×10¹⁷ cm^-3) and dislocations (N_dis=5×10⁹ to 5×10¹¹ cm^-2) at T from 250 to 400 K in the n-Si. At higher doping levels (N_D>10²¹ cm^-3) the correction for a heavier effective mass was carried out. Numerical results are compared with known experimental results, and good agreement was obtained