Title :
Microwave performance of InGaAs/InP composite collector bipolar transistors
Author :
Feygenson, A. ; Hamm, R.A. ; Smith, Peter ; Montgomery, R.K. ; Ritter, Daniel ; Yadvish, R.D. ; Temkin, H.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
A composite collector heterostructure InGaAs/InP bipolar transistor (CCHBT) is described. The collector design assures both the high breakdown voltage, BVCEO, and the high speed needed for practical IC applications. The microwave performance of the CCHBT is presented. The authors have fabricated and tested monolithic transimpedance amplifiers based on these composite collector transistors. A bandwidth of 28 GHz and a gain of 40 dBΩ were obtained
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 28 GHz; HBT; IC applications; InGaAs-InP; bipolar transistors; composite collector; high breakdown voltage; microwave performance; monolithic transimpedance amplifiers; Bandwidth; Bipolar transistors; Current density; Current measurement; Doping; Heterojunctions; Indium gallium arsenide; Indium phosphide; Microwave transistors; Scattering;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274090
