Title :
Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density krypton plasma
Author :
Hirayama, M. ; Sekine, K. ; Saito, Y. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper focuses attention on the electrical properties of silicon oxide films grown by Kr-O/sub 2/ mixed high-density and low electron temperature microwave-excited plasma at 400/spl deg/C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface traps and bulk charge enough to replace thermally grown silicon oxide.
Keywords :
MOS integrated circuits; ULSI; dielectric thin films; electric breakdown; electric strength; integrated circuit technology; interface states; krypton; leakage currents; plasma CVD; plasma CVD coatings; semiconductor-insulator boundaries; silicon compounds; 400 C; Kr; Kr-O/sub 2/; O radical generation; O/sub 2/; SiO; ULSI device fabrication; bulk charge; electrical properties; high charge-to-breakdown; high dielectric strength; high growth rate; high-density Kr plasma; high-integrity SiO films; low electron temperature microwave-excited plasma; low interface trap charge; low-temperature growth; Electrons; Helium; Oxidation; Oxygen; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823890
