Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density krypton plasma

Author

Hirayama, M. ; Sekine, K. ; Saito, Y. ; Ohmi, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

1999

Firstpage

249

Lastpage

252

Abstract

This paper focuses attention on the electrical properties of silicon oxide films grown by Kr-O/sub 2/ mixed high-density and low electron temperature microwave-excited plasma at 400/spl deg/C. They exhibit high growth rate, high dielectric strength, high charge-to-breakdown, and low interface traps and bulk charge enough to replace thermally grown silicon oxide.

Keywords

MOS integrated circuits; ULSI; dielectric thin films; electric breakdown; electric strength; integrated circuit technology; interface states; krypton; leakage currents; plasma CVD; plasma CVD coatings; semiconductor-insulator boundaries; silicon compounds; 400 C; Kr; Kr-O/sub 2/; O radical generation; O/sub 2/; SiO; ULSI device fabrication; bulk charge; electrical properties; high charge-to-breakdown; high dielectric strength; high growth rate; high-density Kr plasma; high-integrity SiO films; low electron temperature microwave-excited plasma; low interface trap charge; low-temperature growth; Electrons; Helium; Oxidation; Oxygen; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823890

Filename

823890