Silicon epitaxial equipment and processing advances for bipolar base technology

Author

Borland, John O.

Author_Institution

Applied Mater. Inc., Santa Clara, CA, USA

fYear

1992

Firstpage

16

Lastpage

22

Abstract

The author reviews silicon epitaxial equipment and processing advances that have contributed to epitaxial base bipolar technology. He addresses equipment design and surface cleaning requirements for a manufacturable low-temperature epitaxial process. Single-wafer and batch multiwafer equipment designs and processing, as well as possible clustered configurations for improved process capabilities, are discussed

Keywords

bipolar integrated circuits; elemental semiconductors; integrated circuit manufacture; integrated circuit technology; semiconductor epitaxial layers; semiconductor growth; silicon; surface treatment; vapour phase epitaxial growth; Si processing technology; UHV CVD systems; batch multiwafer equipment; clustered configurations; epitaxial base bipolar technology; epitaxial equipment; manufacturable low-temperature epitaxial process; single wafer equipment; surface cleaning; Atomic layer deposition; Epitaxial growth; Impurities; Molecular beam epitaxial growth; Paper technology; Process design; Silicon; Surface cleaning; Surface contamination; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274091

Filename

274091