DocumentCode
1639445
Title
64Mb mobile stacked single-crystal Si SRAM (S3RAM) with selective dual pumping scheme (SDPS) and multi cell burn-in scheme (MCBS) for high density and low power SRAM
Author
An, Hung-jun ; Nam, Hyou-youn ; Mo, Hyun-sun ; Son, Jong-Pil ; Lim, Bo-tak ; Kang, Sang-beom ; Han, Gong-heum ; Park, Joon-min ; Kim, Kyung-Hee ; Kim, Su-yeon ; Kwak, Choong-Keun ; Byun, Hyun-Geun
Author_Institution
Memory Div., Samsung Electron. Co. Ltd., Hwasung, South Korea
fYear
2004
Firstpage
282
Lastpage
283
Abstract
A 64Mb Mobile S3RAM was designed with stacked single-crystal thin film transistor (SSTFT) cell using 80nm SRAM technology to overcome chip size penalty of conventional 6T-SRAM with improved performance. For 1.3V operation, word line (WL) and cell Vcc were pumped simultaneously using selective dual pumping scheme (SDPS). Access time of 49.2ns was achieved at 1.3V supply voltage. Multi cell burn-in scheme (MCBS) and standby current (ISB1) repair scheme enhanced the yield for the high density products.
Keywords
CMOS memory circuits; SRAM chips; thin film transistors; 1.3 V; 49.2 ns; 64Mb mobile stacked single-crystal Si SRAM; 80 nm; I.3V operation; chip size penalty; high density; low power SRAM; multi cell burn-in scheme; selective dual pumping scheme; Circuits; Consumer electronics; Costs; Low voltage; Packaging; Random access memory; Read-write memory; Synchronization; Thin film transistors; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8287-0
Type
conf
DOI
10.1109/VLSIC.2004.1346588
Filename
1346588
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