Title :
A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates
Author :
Wang, Shaodi ; Zhang, Lining ; Zhang, Jian ; Wang, Wenping ; Wu, Wen ; Zhang, Xukai ; Liu, Zhiwei ; Bian, Wei ; He, Frank ; Chan, Mansun
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson´s equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared with TCAD simulations, the proposed current model shows less than 1.05% errors, with the doping concentrations ranging from 1.5 × 1016 cm-3 to 1.5 × 1018 cm-3 and different bias conditions. The proposed model is appropriate for precise and quick circuit simulation.
Keywords :
Poisson equation; circuit simulation; silicon; technology CAD (electronics); thin film transistors; 1D Poisson´s equation; TCAD simulation; circuit simulation; doping concentration; monocrystalline silicon thin-film transistor; potential-based analytic model; systems on glass substrate; Doping; Integrated circuit modeling; Mathematical model; Numerical models; Numerical simulation; Semiconductor process modeling; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667744
