Title :
An improved negative level shifter for high speed and low power applications
Author :
Ying, Jianhua ; Wang, Fenghu ; Ding, Chuan ; Ji, Yonghui ; Liu, Ming
Author_Institution :
Dept. of Electron. Sci. & Tech., Huazhong Univ. of Sci. & Tech., Wuhan, China
Abstract :
An improved negative level shifter with high speed and low power consumption is presented. To reduce the switching delay and power consumption, a boost circuit is designed and additional charging current paths are introduced in the improved level shifter. The circuit has been designed in 130nm triple-well standard CMOS technology with a nominal power supply VDD of 1.5V and a negative voltage of -4.5V. Simulation results show that the switching delay and power consumption have been significantly reduced by roughly 78% and 51%, respectively, compared with the conventional negative level shifter.
Keywords :
CMOS integrated circuits; low-power electronics; power convertors; boost circuit design; high speed application; low power consumption; negative level shifter; size 130 nm; switching delay reduction; triple-well standard CMOS technology; voltage -4.5 V; voltage 1.5 V; Delay; Inverters; MOSFETs; Power demand; Simulation; Switching circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667758