Title :
High temperature and high CMR gate driver circuit for wide-band-gap power semiconductors
Author :
Langmaack, N. ; Tareilus, G. ; Henke, M.
Author_Institution :
Inst. for Electr. Machines, Traction & Drives, Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
Wide-band-gap semiconductors continuously keep on pushing the limits of power electronic devices to higher switching speeds and higher operating temperatures. The proposed new gate driver circuit is designed consequently to meet the demands of these power semiconductor devices for high common mode rejection and the capability to work at high ambient temperatures.
Keywords :
driver circuits; high-temperature electronics; power semiconductor devices; wide band gap semiconductors; high CMR gate driver circuit design; high ambient temperatures; high common mode rejection; power electronic devices; wideband gap power semiconductor device; Circuit faults; Demodulation; Driver circuits; Logic gates; Switches; Topology;
Conference_Titel :
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location :
Sydney, NSW
DOI :
10.1109/PEDS.2015.7203380
