DocumentCode
164022
Title
Reducing dielectric breakdown in MEMS switches via a CNTs array embedded in a Si3 N4 substrate
Author
Aldrigo, M. ; Dragoman, M.
Author_Institution
MIMOMEMS Group, IMT, Bucharest, Romania
fYear
2014
fDate
13-15 Oct. 2014
Firstpage
47
Lastpage
50
Abstract
In the last years, MEMS switches have been gathering an increasing interest for their exploitation in several electrostatic and RF applications. In this paper we discuss about the enhancement of dielectric´s reliability in MEMS by embedding an array of Carbon Nanotubes (CNTs) which allows the reducing of the breakdown threshold and, hence, to improve the device capabilities even in presence of high actuation voltages.
Keywords
carbon nanotubes; electric breakdown; microswitches; reliability; CNT array; MEMS switches; RF application; actuation voltage; breakdown threshold reduction; carbon nanotubes; device capabilities; dielectric breakdown reduction; dielectric reliability enhancement; electrostatic application; Arrays; Dielectrics; Electric breakdown; Electrodes; Micromechanical devices; Microswitches; Radio frequency; MEMS; breakdown; carbon nanotube; switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2014 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4799-3916-9
Type
conf
DOI
10.1109/SMICND.2014.6966387
Filename
6966387
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