Title :
A class AB BiCMOS PCS driver amplifier with external gain control
Author :
Ko, Jin-Su ; Kim, Jeong-Keun ; Ko, Beom-Kyu ; Cheon, Dong-Bin ; Lee, Sang-O ; Park, Byeong-Ha
Author_Institution :
CDMA Team, Samsung Electron. Co. Ltd., Kyunggi, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
It is demonstrated that the gain of an amplifier with a large transistor cannot be controlled by bias current but can be controlled effectively by varying the effective emitter inductance. A simple method to control the gain of a driver amplifier is suggested and implemented. The measured gain variation is not less than 6 dB. However, that measured by the conventional method is only 0.5 dB. Using this gain control scheme, a class AB driver amplifier is designed for a PCS handheld phone
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; driver circuits; gain control; inductance; mobile radio; 1.8 GHz; 3.3 V; PCS handheld phone; class AB BiCMOS PCS driver amplifier; effective emitter inductance; external gain control; gain variation; large transistor; power transfer characteristics; BiCMOS integrated circuits; Driver circuits; Equivalent circuits; Gain control; Gain measurement; Inductance; Lead; Personal communication networks; Power amplifiers; Radiofrequency amplifiers;
Conference_Titel :
ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5705-1
DOI :
10.1109/APASIC.1999.824033
