DocumentCode
164031
Title
Finite-size and edge effects on the quantum capacitance of graphene nanoribbon field-effect transistors
Author
Kliros, George S.
Author_Institution
Dept. of Aeronaut. Sci., Electr. Power & Telecommun. Eng. Hellenic Air-Force Acad., Dekelia, Greece
fYear
2014
fDate
13-15 Oct. 2014
Firstpage
63
Lastpage
66
Abstract
A fully analytical model for the quantum capacitance of AGNR-FETs is proposed in order to explore several finite-size and edge effects. It is demonstrated that, the quantum capacitance of sub-10 nm AGNRs versus channel potential, has a non-monotonic behavior with peak values and corresponding channel potentials which are strongly dependent on the ribbon´s width and edge effects.
Keywords
field effect transistors; graphene; nanoribbons; semiconductor device models; AGNR-FET; channel potential; edge effect; finite-size effect; fully-analytical model; graphene nanoribbon field-effect transistors; nonmonotonic behavior; peak value; quantum capacitance; ribbon width; Analytical models; Graphene; Logic gates; Photonic band gap; Quantum capacitance; Transistors; Analytical Modeling; Graphene Nanoribbon Transistors; Quantum Capacitance; Size and Edge Effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2014 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4799-3916-9
Type
conf
DOI
10.1109/SMICND.2014.6966391
Filename
6966391
Link To Document