A very low-noise high-transimpedance preamplifier IC for regenerated optical data transmission systems

Author

Bendé, André Boyoguéo

Author_Institution

Dept. of Electr. Eng., Ecole Polytech., Montreal, Que., Canada

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

87

Lastpage

90

Abstract

This paper discusses ongoing experimental research involving the design of novel architectures applicable to high-speed regenerated data transmission systems. A novel GaAs transimpedance amplifier is described. The design uses a common-source configuration combined with parallel feedback providing low input current noise, high transimpedance and wide dynamic range. PSPICE simulations using a 0.6 μm GaAs process give 1.097 GHz bandwidth, 87 dB transimpedance gain, 2.7 pA/[Hz] ^1/2 average equivalent input noise current spectral density and 35 mW power consumption

Keywords

III-V semiconductors; MESFET integrated circuits; SPICE; UHF amplifiers; circuit simulation; feedback amplifiers; field effect analogue integrated circuits; gallium arsenide; integrated circuit design; integrated circuit noise; optical communication equipment; preamplifiers; 0.6 mum; 1.097 GHz; 35 mW; 87 dB; GaAs; GaAs MESFET RF devices; GaAs transimpedance amplifier; PSPICE simulations; average equivalent input noise current spectral density; common-source configuration; high transimpedance; low input current noise; parallel feedback; power consumption; regenerated optical data transmission systems; transimpedance gain; very low-noise high-transimpedance preamplifier IC; wide dynamic range; Bandwidth; Data communication; Dynamic range; Energy consumption; Feedback; Gain; Gallium arsenide; Integrated circuit noise; Preamplifiers; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5705-1

Type

conf

DOI

10.1109/APASIC.1999.824035

Filename

824035