Title :
Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo
Author :
Li, Zun-Chao ; Xu, Jin-Peng ; Liu, Lin-Lin
Author_Institution :
Dept. of Microelectron., Xi´´an Jiaotong Univ., Xi´´an, China
Abstract :
The dual-material gate and asymmetrical halo structure is used in surrounding gate MOSFET to improve the performance. By treating the device as three surrounding-gate MOSFETs connecting in series and maintaining current continuity, a comprehensive drain current model is developed for it. It is concluded that the device also exhibits increased current drivability and improved hot carrier reliability. The derived analytical model is verified with numerical simulation.
Keywords :
MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; asymmetric halo; asymmetrical halo structure; comprehensive drain current model; current continuity; dual-material gate; dual-material surrounding-gate MOSFET; hot carrier reliability; numerical simulation; Analytical models; Electric potential; Electron devices; Logic gates; MOSFET circuits; Numerical models; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667768
