Title :
A 15-GHz integrated CMOS switch with 21.5-dBm IP1dB and 1.8-dB insertion loss
Author :
Li, Zhenbiao ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A 15-GHz CMOS switch was fully integrated in a 0.13-μm CMOS foundry process. With on-chip LC impedance transformation networks (ITNs), the switch achieves 21.5-dBm input P1dB and 34.5-dBm input IP3. The insertion loss and isolation are 1.8 dB and 17.8 dB. The degradation of insertion loss due to use of ITNs is made negligible by reducing the degradation of insertion loss due to the bond pad capacitances in the switch without ITNs. This is the first CMOS switch operating at 15 GHz with competitive performance as GaAs switches, and requires 3V/1.2V control voltages.
Keywords :
CMOS integrated circuits; semiconductor switches; 0.13 micron; 15 GHz; 15-GHz integrated CMOS switch; CMOS foundry process; insertion loss; isolation; on-chip LC impedance transformation networks; Bonding; CMOS process; Capacitance; Degradation; Foundries; Gallium arsenide; Impedance; Insertion loss; Network-on-a-chip; Switches;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346617
