Bitron - a new high power microwave device

Author

Zheng-Hong, Li ; Fan-Bao, Meng ; An-Bi, Chang ; Hua, Huang ; Qiao-Sheng, Ma

Author_Institution

Inst. of Appl. Electron., China Acad. of Eng. Phys., China

Volume

1

fYear

2005

Firstpage

519

Abstract

Bitron, as a new type of high power microwave device, is proposed in the paper. The parameters (such as microwave power and its efficiency) based on the theoretical analysis has been realized on 2.5D PEC (particle in cell) simulation code. This device composes of two parts: one modulation cavity and one output cavity. The couple exists between these two cavities, so the oscillation occurs under certain conditions. X band bitron is designed in the paper, and its theoretical efficiency is 29.4%. And the process is also realized by 2.5 PIC simulation code, and the efficiency is 28%, the microwave frequency 9.42 GHz, the power 2.25 GW.

Keywords

cavity resonators; microwave devices; 2.25 GW; 9.42 GHz; X band bitron; high power microwave device; modulation cavity; particle in cell simulation code; Analytical models; Electron beams; Equations; Microwave devices; Microwave frequencies; Physics; Power engineering and energy; Radio frequency; Resonance; Solid modeling; RF cavity; high power microwave; mode; self-consistent equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on

Print_ISBN

0-7803-9128-4

Type

conf

DOI

10.1109/MAPE.2005.1617963

Filename

1617963