Title :
Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
Author :
Linten, D. ; Aspemyr, L. ; Jeamsaksiri, Wutthinan ; Ramos, J. ; Mercha, A. ; Jenei, S. ; Thijs, S. ; Garcia, R. ; Jacobsson, H. ; Wambacq, P. ; Donnay, S. ; Decoutere, S.
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Abstract :
The potential of 90 nm CMOS technology for low-power RF front-ends is demonstrated with fully integrated low-voltage Low-Noise Amplifiers (LNA) and Voltage-Controlled Oscillators (VCO). The 5.5 GHz LNA draws 3.5 mA from a 0.6 V supply with a measured power gain of 11.2 dB, and a 3.2 dB noise figure. The 6.3 GHz VCO has a phase noise of -118 dBc/Hz at 1 MHz offset, drawing 4.9 mA from a 1.2 V supply.
Keywords :
CMOS integrated circuits; electron device noise; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; voltage-controlled oscillators; 0.6 V; 1.2 V; 11.2 dB; 3.2 dB; 3.5 mA; 4.9 mA; 5 GHz; 6.3 GHz; 90 nm; 90 nm RF CMOS; Low-Noise Amplifiers; VCO; low-power 5 GHz LNA; CMOS process; CMOS technology; Capacitance; Impedance; Inductors; Low-noise amplifiers; MOSFETs; Personal digital assistants; Radio frequency; Voltage-controlled oscillators;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346619
