Title :
LPCVD process simulation based on Monte Carlo method
Author :
Dai, Jian-Yang ; Zhou, Zai-Fa ; Huang, Qing-An ; Li, Wei-Hua
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
Mechanisms during low pressure deposition (LPCVD) process in Micro-Electro-Mechanical Systems (MEMS) and Integrated Circuits (IC) fabrication have been analyzed. The LPCVD process has then been successfully simulated based on the re-emission models with Monte Carlo method and the Lagrangian method (shorthand denoted as L-type method) for boundary movement simulation. Simulation results show an agreement with the available experimental results. This is useful for the research of LPCVD process and the development of MEMS and IC design.
Keywords :
Monte Carlo methods; chemical vapour deposition; integrated circuit manufacture; micromechanical devices; semiconductor process modelling; LPCVD process simulation; Lagrangian method; MEMS; Monte Carlo method; integrated circuits fabrication; low pressure deposition process; microelectromechanical systems; Inductors; Integrated circuit modeling; Micromechanical devices; Monte Carlo methods; Simulation; Surface treatment; L-type method; LPCVD; MEMS; Monte Carlo method; process simulation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667771
