Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al₂O₃. The temperature-dependent electrical characteristics like I_GD-V_GD, I_DS-V_DS, and I_DS-V_GS are measured from 300 K to 480 K. The MOS-HEMT shows lower I_GD and higher I_DS and higher g_{m, max}. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al₂O₃/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al₂O₃ passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.