Title :
Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films
Author :
Minkov, I.P. ; Simeonov, S. ; Szekeres, A. ; Fogarassy, Zs ; Socol, G. ; Ristoscu, C. ; Mihailescu, I.
Author_Institution :
Tech. Univ. - Sofia, Sofia, Bulgaria
Abstract :
AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.
Keywords :
III-V semiconductors; MIS structures; aluminium compounds; electrical conductivity; pulsed laser deposition; semiconductor thin films; silicon; wide band gap semiconductors; AlN:Si; I-V characteristic; MHz C-V characteristic; MIS structure; PLD; Si; charge transport; current-voltage characteristic; pulsed laser deposited; Capacitance; Electric fields; Films; III-V semiconductor materials; Nitrogen; Silicon; Voltage measurement; Si doping; aluminium nitride; electrical characteristics; pulsed laser deposition;
Conference_Titel :
Semiconductor Conference (CAS), 2014 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4799-3916-9
DOI :
10.1109/SMICND.2014.6966404
