Title :
A temperature sensor in 0.6 μm CMOS technology
Author :
Weng, Ming-Chan ; Wu, Jiin-Chuan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/21/1905 12:00:00 AM
Abstract :
A fully integrated CMOS temperature sensor is presented. The design uses parasitic substrate bipolar transistors as a temperature sensor. The temperature and reference signals are first converted into current signals by a voltage-to-current converter and then converted to a digital output by a sigma-delta analog-to-digital converter. Fabricated in a 0.6 μm CMOS process, this circuit occupies an active area of 0.7 mm2. In the temperature range from 40 to 130°C, the error is ±1.5°C after one-point calibration
Keywords :
CMOS integrated circuits; calibration; sigma-delta modulation; temperature sensors; 0.6 micron; 40 to 130 degC; CMOS technology; active area; current signals; digital output; one-point calibration; parasitic substrate bipolar transistors; reference signals; sigma-delta analog-to-digital converter; temperature sensor; voltage-to-current converter; Analog-digital conversion; Bipolar transistors; CMOS process; CMOS technology; Calibration; Circuits; Delta-sigma modulation; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5705-1
DOI :
10.1109/APASIC.1999.824042
