Author_Institution :
Fiber Opt. Div., Integrated Products, Austin, TX, USA
Abstract :
Notice of Violation of IEEE Publication Principles
"A lOGbls SiGe Transimpedance Amplifier Using a Pseudo-Differential Input Stage and a Modified Cherry-Hooper Amplifier"
by Maxim, A
in the IEEE Symposium on VLSI Circuits, 2004. Digest of Technical Papers.
After careful and considered review, it has been determined that the above paper is in violation of IEEE\´s Publication Principles.
Specifically, the author admitted that data contained in the paper is falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A 10Gb/s inductor-free transimpedance amplifier was realized in a 0.2 μm SiGe process with f/sub T/=60GHz. The input stage uses a pseudo-differential cascoded common emitter architecture that achieves both low input noise and good supply and substrate rejection. The wideband operation is assured by using input bondwire inductive peaking in conjunction with feedback capacitive peaking. Low voltage operation was achieved by eliminating the inter-stage isolation emitter followers and minimizing the capacitive load at the high impedance nodes through emitter degeneration and cross-coupled Miller capacitance neutraliza- ion.
Keywords :
CMOS memory circuits; Ge-Si alloys; cascade systems; differential amplifiers; feedback; 0.2 micron; 10 Gbit/s; 10Gb/s SiGe transimpedance amplifier; 60 GHz; SiGe; cascoded common emitter architecture; cross-coupled Miller capacitance neutralization; emitter degeneration; feedback capacitive peaking; input bondwire inductive peaking; low input noise; modified Cherry-Hooper amplifier; pseudo-differential input stage; substrate rejection; wideband operation; Broadband amplifiers; Circuits; Feedback; Germanium silicon alloys; Notice of Violation; Silicon germanium; Very large scale integration; Wideband;