Title :
A threshold voltage model for the surrounding-gate MOSFETs
Author :
Mei, Guanghui ; Hu, Guangxi ; Li, Peicheng ; Gu, Jinglun ; Liu, Ran ; Tang, Tingao
Author_Institution :
Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson´s Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (Vth) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The Vth model can be used for the integrated circuit designers.
Keywords :
MOSFET circuits; Poisson equation; integrated circuit design; integrated circuit modelling; MOSFET; Poisson´s equation; Sentaurus simulations; integrated circuit design; metal-oxide-semiconductor field-effect transistor; surrounding gate; threshold voltage model; Analytical models; Electric potential; Integrated circuit modeling; MOSFETs; Numerical models; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667783
