Title :
Radiation hardened 256K CMOS SOI SRAM
Author :
Kai, Zhao ; Jiantou, Gao ; Zhongli, Liu ; Fang, Yu ; Ning, Li ; Bo, Yang ; Ningjuan, Wang ; Zhiqiang, Xiao ; Genshen, Hong
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
A radiation hardened 256K-bit asynchronous SRAM is presented. It is fabricated by a 0.5-micron, radiation hardened CMOS PDSOI process with 3 layers of metal. It features 800uA stand-by current, 42ns access time, 300K rad(Si) total dose tolerant and 1.5 × 1011rad (Si)/s dose rate survivability. A 28-pin DIP package is used. The circuit operates with ambient temperature from -55 to +125°C and power supply from 4.5 to 5.5V.
Keywords :
CMOS integrated circuits; SRAM chips; asynchronous circuits; radiation hardening (electronics); silicon-on-insulator; asynchronous SRAM; current 800 muA; memory size 256 KByte; radiation hardened CMOS SOI SRAM; temperature -55 degC to 125 degC; time 42 ns; voltage 4.5 V to 5.5 V; CMOS integrated circuits; CMOS technology; Layout; Radiation hardening; Random access memory; Silicon; Transient analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667784
