An analytic threshold voltage model for the double-gate Schottky-Barrier source/drain MOSFETs

The threshold voltage, V_th of a double-gate Schottky-Barrier (DGSB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in the channel is obtained and the results are verified via simulations, good agreement is observed. A new definition for V_th is given, and an analytic expression for V_th is presented. We find that when the silicon thickness, t_si is small (<;3 nm), V_th is very sensitive to it. V_th increases dramatically with the decreasing of t_si. V_th also increases with the increasing of the oxide thickness, and with the decreasing of the drain-source voltage. These results can be of great help to the ultralarge-scale integrated-circuit (ULSI) designers.