A simplified simulation model for CMOS integrated Hall devices working at low magnetic field circumstance

A simplified simulation model for CMOS integrated cross-shaped Hall devices working at low magnetic field circumstance is introduced. The model only consists of a network of passive components including resistors, capacitors and current-controlled voltage sources, so it can be easily implemented in SPICE-like EDA simulators. Nonlinear effects, geometry, temperature and packaging stress are taken into account in this model. The model has been written in Verilog-AMS and simulated in SMASH 5.7.0. To show the correctness and accuracy of the model, the electrical characteristics of cross-shaped Hall element have been simulated in 3D using Silvaco TCAD. A very good agreement is achieved between the behavioral Verilog-AMS simulation and 3D device simulation.