Title :
Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature
Author :
Achour, H. ; Cretu, B. ; Routoure, J.-M. ; Carin, R. ; Benfdila, A. ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
UMR 6072 GREYC, Univ. of Caen Basse-Normandie, Caen, France
Abstract :
The impact of cryogenic temperature operation on the short channel effects and analog performances was analysed on strained and unstrained p-channel SOI FinFETs. The main electrical parameters extracted from the saturation mode of operation are investigated and compared to those found at room temperature. Low frequency noise measurements at 10 K operation show that the carrier number fluctuations dominate the flicker noise in moderate inversion, while the access resistance noise contributions prevail in strong inversion.
Keywords :
MOSFET; cryogenic electronics; flicker noise; noise measurement; silicon-on-insulator; FinFET; SOI substrates; access resistance noise contributions; analog performances; carrier number fluctuations; cryogenic temperature operation; flicker noise; low frequency noise measurements; main electrical parameters; saturation operation; short channel effects; strained p-channel; temperature 10 K; unstrained p-channel; 1f noise; FinFETs; Logic gates; Standards; Temperature; Temperature measurement; DIBL; Early voltage; FinFET; SOI; intrinsic gain; low frequency noise; strain;
Conference_Titel :
Semiconductor Conference (CAS), 2014 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4799-3916-9
DOI :
10.1109/SMICND.2014.6966429
