Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses

In this paper we propose to modify the pulses classically used during the channel-hot-electron programming phase of a Flash memory and to replace it by a sequence of ultra-short pulses in order to decrease the programming window closure observed during the endurance test. We start this work presenting the other solutions published in literature. Then, we describe our advanced measurement setup and finally we show our experimental results. Furthermore we evaluate the impact of these ultra-short pulses on the current consumption during the programming phase.