Design and Fabrication of Low Voltage Silicon Trench MOS Barrier Schottky Rectifier for High Temperature Applications

This paper presents the design, fabrication, and characterization of 60V and 100V silicon Trench MOS Barrier Schottky (TMBS) rectifier. The devices were designed for switching power supplies operated in high temperature environment. Design considerations of silicon TMBS rectifiers are discussed in this paper. Trench structure design and trench oxide were improved to produce low reverse leakage current and high device performance. As a result, TMBS rectifiers with blocking voltage of up to 60V and 100V were successfully fabricated. The tradeoff between reverse leakage current and forward voltage drop are well controlled at high operating temperature (>75°C).