• DocumentCode
    1641193
  • Title

    Recent achievements in the thermal characterization of electronic devices by means of boundary condition independent compact models

  • Author

    Vinke, H. ; Lasance, C.J.M.

  • Author_Institution
    Philips Centre for Manuf. Technol., Eindhoven, Netherlands
  • fYear
    1997
  • Firstpage
    32
  • Lastpage
    39
  • Abstract
    In this paper recent achievements in the thermal characterization of electronic devices by means of so-called `compact models´ are described. A `compact model´ is a simplification of a detailed model of a device. It is a simple network comprising a limited number of thermal resistances (typically 7), connecting the critical part of the device (usually the junction) to the outer parts of the device, is independent of the applied boundary conditions, and is capable of accurately representing the full model. This method of thermal characterization is suited for embedding in the design environments that are employed by the electronics industries, and the compact models can be incorporated into the component libraries linked to PCB thermal analysis software packages. A new methodology for deriving more or less `standardized´ compact models is presented. The possibility of creating parametric compact models, and the influence of differences in ambient temperatures, is discussed. It is demonstrated that the thermal behaviour of electronic devices by means of compact models can be approached within typically 6% of the detailed model values
  • Keywords
    integrated circuit design; integrated circuit packaging; plastic packaging; thermal analysis; thermal resistance; IC packaging; PCB thermal analysis; ambient temperatures; boundary condition independent compact models; design environments; parametric compact models; software packages; thermal characterization; thermal resistances; Boundary conditions; Electronic packaging thermal management; Joining processes; Predictive models; Resistance heating; Surface resistance; Temperature; Thermal conductivity; Thermal factors; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 1997. SEMI-THERM XIII., Thirteenth Annual IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1065-2221
  • Print_ISBN
    0-7803-3793-X
  • Type

    conf

  • DOI
    10.1109/STHERM.1997.566780
  • Filename
    566780