The microwave performances of SiGe/Si HBT based on the high resistivity substrate

Author

Yang, Weiming ; Shi, Chen ; Gao, Mingjie ; Li, Zhenguo ; Chen, Jianxin

Author_Institution

Beijing Optoelectronics Technol. Lab, Beijing Univ. of Technol.

Volume

1

fYear

2005

Firstpage

654

Abstract

The sample of SiGe HBT based on the high resistivity substrate of 1000 Omega-cm was fabricated in a 3 mum manufacture process line. After the structure and fabrication procedure of the device were introduced, the influence of the substrate on the microwave performances was analyzed basing on its high frequency equivalent circuit model. Then the f_T, f_max and the minimum noise figure of the sample were tested and compared to the one based on the conventional N ⁺ substrate. The results indicate that the f_T and the f_max of the former are 4 GHz and 2 GHz larger than that of the latter respectively. In the meantime, the minimum noise figures have almost not been deteriorated

Keywords

Ge-Si alloys; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor materials; silicon; HBT; SiGe; SiGe-Si; frequency equivalent circuit model; microwave performances; Conductivity; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Microwave devices; Noise figure; Performance analysis; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

0-7803-9128-4

Type

conf

DOI

10.1109/MAPE.2005.1617995

Filename

1617995