Title :
Simple approach for statistical modeling of process impacts on CMOS device variations in VLSI applications
Author :
Li, Meng ; Liang, Qingqing ; Zhong, Huicai ; Zhu, Huilong
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
A novel methodology to statistically analyze the statistics on small device performance is presented for the first time. To verify the accuracy of analysis and modeling, TCAD simulation is used to mimic possible process-induced and random fluctuations. The proposed approach precisely decouples various process dependency of the device electric behavior and predicts the device performance trend induced by these variables.
Keywords :
CAD; CMOS integrated circuits; VLSI; integrated circuit modelling; semiconductor process modelling; statistical analysis; CMOS device variation; TCAD simulation; VLSI application; process impact; process induced fluctuation; random fluctuation; statistical modeling; Analytical models; CMOS integrated circuits; Correlation; Fluctuations; Logic gates; Performance evaluation; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667807
