Title :
Band structure calculation of wide bandgap p-type semiconductor material BaCuTeF
Author :
Zakutayev, Andriy
Author_Institution :
Dept. of Phys., Oregon State Univ., Corvallis, OR, USA
Abstract :
In this paper the results of the band structure calculation of BaCuTeF are presented. This material has a direct gap. The physical properties of it are defined by the Cu-Te sheets in its layered crystal structure. BaCuTeF is a promising candidate for the various optoelectronics applications.
Keywords :
crystal structure; electronic density of states; energy gap; optoelectronic devices; wide band gap semiconductors; BaCuTeF; band structure calculation; direct gap; layered crystal structure; optoelectronics applications; wide bandgap p-type semiconductor material; BaCuTeF; band structure calculation; layered chalcogenides-fluorides; wide bandgap p-type semiconductor;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2008 Proceedings of International Conference on
Conference_Location :
Lviv-Slavsko
Print_ISBN :
978-966-553-678-9
