Broadband 65nm CMOS SOI LNA for a 100Gbit/s fiber-optic SCM transceiver

Author

Platt, D. ; Pettersson, Lars ; Salter, Martin

Author_Institution

Acreo AB, Norrkoping, Sweden

fYear

2012

Firstpage

16

Lastpage

19

Abstract

The suitability of the ST Microelectronics 65nm CMOS LP SOI process on HR substrate for a 100Gbit/s fiber-optic SCM transceiver LNA is examined in this paper. A broadband single stage and three stage LNA, using requirements derived from system simulations, were designed with bandwidths from 2GHz to 40GHz and 2GHz to 26GHz at gains of 5dB and 15dB respectively. A noise figure of ~5-7dB was obtained. Although the LNA noise figure is not as good, when compared to LNAs designed using other semiconductor technologies, it is still sufficient to be considered for the application, and has the advantage that it can be integrated with complex digital and analog baseband CMOS circuits.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; silicon-on-insulator; wideband amplifiers; HR substrate; ST microelectronics CMOS LP SOI process; analog baseband CMOS circuits; bandwidth 2 GHz to 40 GHz; broadband CMOS SOI LNA; byte rate 100 GByte/s; complex digital; fiber-optic SCM transceiver; gain 5 dB; noise figure 5 dB to 7 dB; semiconductor technologies; size 65 nm; CMOS integrated circuits; CMOS technology; Noise measurement; Optical fibers; Optical transmitters; Semiconductor device modeling; Transceivers; CMOS integrated circuits; Low-noise amplifiers; Silicon on insulator technology; broadband communication; circuits and systems; microwave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483724