Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Author

Du, Gang ; Zhang, Wei ; Wang, Juncheng ; Lu, Tiao ; Zhang, Pingwen ; Liu, Xiaoyan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2010

Firstpage

1952

Lastpage

1954

Abstract

As MOSFETs scaling down to nano-scale, short channel effect(SCE) become a critical issue. Multiple channel MOSFET structure such as FINFET has well gate controllability on channel charge, and will be used in nano-scale CMOS technology. In this work the performance of 20nm bulk FINFET is investigated by Using 3D full band Monte Carlo Method with Effective Potential Quantum Correction. Gate and drain bias affect on the carrier density, velocity and energy distribution are introduced. The transit time and SSEC C_gs and C_gd as a function of V_ds are showed. Results show about 0.1 psec intrinsic transit time at on state in this 20nm gate length device.

Keywords

MOSFET; Monte Carlo methods; carrier density; 3D full band Monte Carlo method; FINFET; SCE; carrier density; drain bias affect; effective potential quantum correction; energy distribution; gate bias effect; multiple channel MOSFET structure; short channel effect; size 20 nm; velocity; Electron mobility; FinFETs; IEEE Potentials; Logic gates; Monte Carlo methods; Scattering; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667816

Filename

5667816