On-chip high-Q solenoid inductors embedded in WL-CSP

Author

Itoi, Kazuhisa ; Sato, Masakazu ; Abe, Hiroshi ; Ito, Hiroyuki ; Sugawara, Hirotaka ; Okada, Kenichi ; Masu, Kazuya ; Ito, Tatsuya

Author_Institution

Lab. of Electron Device, Fujikura Ltd., Tokyo, Japan

fYear

2004

Firstpage

105

Lastpage

108

Abstract

On-chip Cu solenoid inductors on Si substrate with thick resin layer have been fabricated. These inductors were fabricated by dual Cu electroplating layers and separated more than 10 μm from Si substrate by thick resin layer. The self-resonance frequency of 17.7 and higher than 20 GHz with peak-Q of 18.5 and 24.2 were obtained for a 5 turn solenoid inductor in the resistivity of 4, 1k Ωcm, respectively. This technology realizes that high performance inductors are embedded in wafer-level chip-scale packages.

Keywords

chip scale packaging; electroplating; inductors; solenoids; 10 micron; 17.7 GHz; Cu solenoid inductors; Si substrate; WL-CSP; chip-scale packages; dual Cu electroplating layers; high performance inductors; high-Q solenoid inductors; on-chip solenoid inductors; thick resin layer; wafer-level packages; CMOS technology; Copper; Eddy currents; Environmentally friendly manufacturing techniques; Frequency; Inductors; MMICs; Packaging; Resins; Solenoids;

fLanguage

English

Publisher

ieee

Conference_Titel

High Density Microsystem Design and Packaging and Component Failure Analysis, 2004. HDP '04. Proceeding of the Sixth IEEE CPMT Conference on

Print_ISBN

0-7803-8620-5

Type

conf

DOI

10.1109/HPD.2004.1346681

Filename

1346681