DocumentCode
1642379
Title
W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology
Author
van Heijningen, M. ; Rodenburg, M. ; van Vliet, Frank E. ; Massler, Hermann ; Tessmann, A. ; Bruckner, P. ; Muller, Sebastian ; Schwantuschke, Dirk ; Quay, Ruediger ; Narhi, T.
Author_Institution
TNO, The Hague, Netherlands
fYear
2012
Firstpage
135
Lastpage
138
Abstract
The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10 dB of power gain is reached for a compression level of around 2 dB per stage.
Keywords
MMIC amplifiers; power amplifiers; AlGaN-GaN; W band power amplifier MMIC; dual stage amplifier; frequency 90 GHz; output power gain; power 400 mW; size 0.1 mum; voltage 20 V; Gain; Gallium nitride; Impedance matching; Logic gates; MMICs; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2302-4
Electronic_ISBN
978-2-87487-026-2
Type
conf
Filename
6483754
Link To Document