RF characterization of deep-submicron DRAM-embedded CMOS process

Author

Park, Seong-Ho ; Lim, Gwang-Hyun ; Lee, Yong-Hee

Author_Institution

ASIC Team, Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

409

Lastpage

412

Abstract

In this paper rf characteristics of a 0.25 μm DRAM embedded CMOS process, focused on the n-MOSFET and the spiral inductor of the critical devices in rf CMOS circuit design, have been investigated. An extremely high cutoff frequency of 44 GHz, high maximum operating frequency of 29 GHz, and a de-embedded minimum noise figure of 1.0 dB have been obtained for a 0.24 μm n-MOSFET. As for the spiral inductors, we obtained a peak quality factor of 5.2 at 3.6 nH for a 5-turn inductor and also an inductance of 1.2 to 22.6 nH for inductors with various numbers of turns. These figures of merit seem to be suitable for rf circuits with operating frequency up to 2.5 GHz although the low quality factor of the spiral inductor should be improved

Keywords

CMOS digital integrated circuits; DRAM chips; MOSFET; Q-factor; S-parameters; UHF integrated circuits; application specific integrated circuits; embedded systems; field effect MMIC; inductance; inductors; integrated circuit noise; 0.25 mum; 1 dB; 2.5 GHz; 29 GHz; 44 GHz; 5-turn inductor; RF characterization; S-parameter measurement patterns; cutoff frequency; de-embedded minimum noise figure; deep-submicron DRAM-embedded CMOS process; figures of merit; maximum operating frequency; n-MOSFET; peak quality factor; rf CMOS circuit design; spiral inductor; CMOS process; Circuit synthesis; Cutoff frequency; Inductors; MOSFET circuits; Noise figure; Q factor; Radio frequency; Random access memory; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5705-1

Type

conf

DOI

10.1109/APASIC.1999.824123

Filename

824123