An accurate scalable nonlinear model for GaAs E-pHEMT and low noise amplifiers

Author

Xiangkun Zhang ; Lin, Bo ; Chau, F. ; Jingshi Yao ; Xiaopeng Sun ; Wenlong Ma ; Hu, Pengcheng

Author_Institution

TriQuint Semicond., San Jose, CA, USA

fYear

2012

Firstpage

167

Lastpage

170

Abstract

An accurate non-linear large signal model is developed for GaAs E-pHEMT by revising the Verilog-A source code of the Angelov (Chalmers) model. The model is scalable and the scaling is fully verified by DC, thermal, capacitances, and S-parameters under multiple bias conditions. Excellent agreement between the simulation and measurement has been achieved for two device sizes at different temperatures. The model is applied to a low noise amplifier and can precisely predict RF power, gain, P_1dB, G_1dB, operation current, efficiency, OIP3, and noise figure.

Keywords

III-V semiconductors; gallium arsenide; hardware description languages; high electron mobility transistors; low noise amplifiers; semiconductor device models; Angelov model; Chalmers model; DC scaling; E-pHEMT; GaAs; OIP3; RF power prediction; S- parameter scaling; Verilog-A code; capacitance scaling; low noise amplifier; noise figure; scalable nonlinear large signal model; thermal scaling; Capacitance; Current measurement; Gallium arsenide; Integrated circuit modeling; Logic gates; Mathematical model; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483762