Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors

We present the results of intrinsic transit time separation of SiGe:C heterojunction bipolar transistors (HBT). This is performed using a reliable technique based on hydrodynamic modeling. These results are compared to the extraction of the noise transport time. This last parameter is found to be equal to the sum of the base transit time (τ_B) and of the collector transit time (τ_C), this result agrees with the findings reported in the literature. This strategy of transit time extraction may help to quantify the influence of base doping, Ge content and temperature on HBT performances.