An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology

Author

Weber, R. ; Hurm, V. ; Massler, Hermann ; Weissbrodt, Ernst ; Tessmann, A. ; Leuther, A. ; Narhi, T. ; Kallfass, I.

Author_Institution

Fraunhofer-Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2012

Firstpage

187

Lastpage

190

Abstract

In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz.

Keywords

MMIC amplifiers; high electron mobility transistors; low noise amplifiers; microwave amplifiers; microwave transistors; H-band low-noise amplifier MMIC; bandwidth 218 GHz to 260 GHz; cascode configuration; common-gate transistors; common-source transistors; frequency 220 GHz to 325 GHz; gate length; linear gain; metamorphic HEMT technology; noise figure measurement; size 35 nm; three-stage LNA circuit; Current measurement; Gain; MMICs; Noise figure; Receivers; mHEMTs; H-band (220–325 GHz); cascode; grounded coplanar waveguide (GCPW); low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); noise figure (NF);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483767