High current metal ion implantation facility

Summary form only given. A vacuum arc ion source based metal ion implantation facility has been established at Dokuz Eylul University, Izmir, Turkey and a surface modification research and development program is underway. The system is similar to the one in Lawrence Berkeley Laboratory which was first built and developed by Brown et al. The broad-beam ion source is repetitively pulsed at rates up to /spl sim/10 pulses per second (can be increased to 50 pulses per second) and the extracted ion beam current can be up to /spl sim/1 Amp. peak or /spl sim/10 mA time averaged. The ion source extraction voltage was increased to 60 kV corresponding to mean beam energies of up to 150 keV or more because of the ion charge state multiplicity (extraction voltage can be increased to 100 kV if desired). Commisioning of the facility is in progress. Initial emphasis of the R&D programs that will be carried will be in forming tribologically enhanced materials for industrial applications. In this paper we describe the design and operation of the implanter, summarize the preliminary performance parameters that have been obtained, and outline some of the programs we anticipate doing.