DocumentCode
1642746
Title
Surface free technology by laser annealing (SUFTLA)
Author
Shimoda, T. ; Inoue, Shingo
Author_Institution
Base Technol. Res. Center, Seiko Epson Corp., Nagano, Japan
fYear
1999
Firstpage
289
Lastpage
292
Abstract
A new technology, which enables the transfer of thin films or thin film devices from original substrate to any substrate by using laser annealing, has been investigated. This technology was named SUFTLA which stands for surface free technology by laser annealing. Low temperature (/spl les/425/spl deg/C) polycrystalline-silicon thin film transistors (poly-Si TFTs) and TFT circuits could be successfully transferred from glass or quartz substrate to plastic film. The circuit functionalities of CMOS ring oscillators were not affected by this transfer.
Keywords
elemental semiconductors; laser beam annealing; liquid crystal displays; silicon; thin film transistors; 425 degC; LCDs; SUFTLA; Si; TFT circuits; circuit functionalities; laser annealing; polysilicon thin film transistors; surface free technology; Annealing; CMOS technology; Glass; Ring lasers; Substrates; Surface emitting lasers; Temperature; Thin film circuits; Thin film devices; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824153
Filename
824153
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