DocumentCode
1642842
Title
Influence of negative ions in a source plasma on the excess energy of a low-energy ion beam
Author
Sakudo, N. ; Hayashi, K. ; Kawasaki, A. ; Ikenaga, N. ; Sakaguchi, N.
Author_Institution
Adv. Mater. Sci. Res. & Dev. Center, Kanazawa Inst. of Technol., Ishikawa, Japan
fYear
1998
Firstpage
250
Abstract
Summary form only given. An ion source plasma as well as a process plasma for semiconductor device fabrication usually contains some negative ions besides the basic charged particles, positive ions and electrons. In this paper, we study the influence of the negative ions on the excess energy. The increase in the density of negative ions decreases the plasma potential and the excess energy.
Keywords
ion beams; negative ions; plasma applications; plasma production; semiconductor device manufacture; basic charged particles; electrons; excess energy; low-energy ion beam; negative ions; plasma potential; positive ions; process plasma; semiconductor device fabrication; source plasma; Atomic measurements; Ion beams; Plasma applications; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma simulation; Plasma sources; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location
Raleigh, NC, USA
ISSN
0730-9244
Print_ISBN
0-7803-4792-7
Type
conf
DOI
10.1109/PLASMA.1998.677803
Filename
677803
Link To Document