Two-dimensional dopant characterization using SIMS, SCS and TSUPREM4

Author

Ukraintsev, V.A. ; Walsh, S.T. ; Ashburn, S.P. ; Machala, C.F. ; Edwards, H. ; Gray, J.T. ; Joshi, S. ; Woodall, D. ; Chang, M.-C.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1999

Firstpage

349

Lastpage

352

Abstract

Quantitative two-dimensional (2D) dopant profiling for 0.25 micron CMOS technology was demonstrated using secondary ion mass-spectrometry (SIMS) and scanning capacitance spectroscopy (SCS). P-well and N-well dopant profiles measured by 2D SIMS are in agreement with TSUPREM4 (TS4) simulations. TS4 was pre-calibrated to the specific technology using 1D SIMS and electrical data. 2D SIMS, TS4 and SCS show agreement on the well boundary location. SCS is an advanced form of scanning capacitance microscopy (SCM) devised for pn-junction delineation. 2D SIMS dopant profiling with lateral resolution of 10 nm (limited by the lithography pixel size) and sensitivity of 1/spl times/10/sup 17/ cm/sup -3/ was realized on commercial equipment.

Keywords

CMOS integrated circuits; doping profiles; integrated circuit technology; scanning probe microscopy; secondary ion mass spectra; semiconductor process modelling; CMOS technology; TSUPREM4 simulation; scanning capacitance spectroscopy; secondary ion mass spectrometry; two-dimensional dopant profile; CMOS technology; Capacitance; Etching; Implants; Isolation technology; Lithography; Mass spectroscopy; Plasma applications; Plasma chemistry; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824167

Filename

824167