Title :
Influence of the gate current dynamic behaviour on GaAs HEMT reliability issues
Author :
Vadala, Valeria ; Bosi, Gianni ; Raffo, Antonio ; Vannini, Giorgio ; Avolio, Gustavo ; Schreurs, D.M.P.
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
In this manuscript reliability issues in GaAs pHEMTs are empirically investigated. Starting from typical reliability approaches where the average value of the gate current is dealt with, we show that an exhaustive information for reliability analysis can be obtained only by looking at the gate current dynamic behaviour. Different experimental examples are provided in order to demonstrate the validity of the proposed considerations.
Keywords :
III-V semiconductors; gallium arsenide; power HEMT; semiconductor device measurement; semiconductor device reliability; GaAs; HEMT reliability analysis; gate current dynamic behaviour; semiconductor device measurement; time-domain measurement; Current measurement; Electric breakdown; Electron devices; Gallium arsenide; Logic gates; Reliability; Temperature measurement; GaAs HEMTs; non-linear modeling; reliability; semiconductor device measurements; time-domain measurements;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
