DocumentCode :
1643205
Title :
The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell
Author :
Feng, Shanggong ; Chen, Yanhu ; Li, Huijun ; Wu, Hongcai
Author_Institution :
Sch. of Inf. Sci. & Eng., Shan Dong Univ., Jinan, China
fYear :
2010
Firstpage :
2007
Lastpage :
2009
Abstract :
In this paper the photocurrent properties of the CdS/CdTe thin film solar cell were modeled by using relative physical models that were the incoherence model of the optical generation, the continuity equation for carriers and the current density equation. Then the effect of CdS and CdTe thickness on the photo current was simulated. The results of the simulation show that: a optimum CdTe thickness were exited for a max photo current and thinner CdS thickness would reduce the optimum CdTe thickness and be helpful for improving the cell performance and lowing the cell cost.
Keywords :
photoconductivity; solar cells; thin film devices; CdS-CdTe; continuity equation; current density equation; incoherence model; max photo current; multilayer thin film solar cell; photocurrent property; Equations; Mathematical model; Optical films; Optical reflection; Photoconductivity; Photovoltaic cells; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667870
Filename :
5667870
Link To Document :
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