Title :
Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs
Author :
Majima, H. ; Ishikuro, H. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
This paper describes a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFETs. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFETs whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes into account horizontal and vertical carrier confinement in a silicon narrow wire, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.
Keywords :
MOSFET; 10 nm; Si; carrier confinement; numerical simulation; quantum mechanical narrow channel effect; silicon wire; threshold voltage; ultra-narrow MOSFET; Carrier confinement; Electron beams; Fabrication; Lithography; MOSFETs; Quantum mechanics; Resists; Substrates; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824174
